Contribution à l'étude des contacts ohmiques sur GaSb de type n et InAs de type pKhald, Hassan; Joullie, A.1989, 110 p.Thesis

EVALUATION OF THE STRUCTURE FACTOR IN MOLTEN BINARY SYSTEMS ON THE BASIS OF ANALYSIS OF DATA ON PHASE EQUILIBRIAGLAZOV VM; PAVLOVA LM.1981; ZH. FIZ. KHIM.; SUN; DA. 1981-10; VOL. 55; NO 10; PP. 2485-2490; BIBL. 12 REF.Article

Low pressure metalorganic vapor phase epitaxy and characterization of (Al,Ga) Sb/GaSb heterostructuresBEHET, M; SCHNEIDER, P; MOULIN, D et al.Journal of crystal growth. 1996, Vol 167, Num 3-4, pp 415-420, issn 0022-0248Article

Band discontinuities of perfectly lattice-matched GaSb(n)/GaAlAsSb(p)/GaSb(p) double heterojunctionAIT KACI, H; BOUKREDIMI, D; MEBARKI, M et al.Physica status solidi. A. Applied research. 1997, Vol 163, Num 1, pp 101-106, issn 0031-8965Article

Spin orientation due to longitudinal currenat and interband tunnelling in narrow-gap heterostructuresZAKHAROVA, A; VASKO, F. T; RYZHII, V et al.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 37, pp 7537-7546, issn 0953-8984Article

Solid state phase equilibria in the Fe-Ga-Sb ternary system at 600 °CDEPUTIER, S; BARRIER, N; GUERIN, R et al.Journal of alloys and compounds. 2002, Vol 340, Num 1-2, pp 132-140, issn 0925-8388Article

Optical study of intersubband transitions in GaSb/AlGaSb systems for QWIPsFERRINI, R; GUIZZETTI, G; PATRINI, M et al.Optical materials (Amsterdam). 2001, Vol 17, Num 1-2, pp 351-354, issn 0925-3467Conference Paper

Smooth interface effects on the confinement properties of GaSb/Al_xGa_1-xSb quantum wellsADIB, Artur B; DE SOUSA, Jeanlex S; FARIAS, Gil A et al.Applied surface science. 2000, Vol 166, pp 336-340, issn 0169-4332Conference Paper

Phonon-assisted interband tunnelling in single-barrier structures with type II heterojunctionsZAKHAROVA, A.Journal of physics. Condensed matter (Print). 1997, Vol 9, Num 22, pp 4635-4642, issn 0953-8984Article

Determination of the thickness of epitaxial layers of different degree of perfection from the integral x-ray diffractional reflection coefficientsKYUTT, R. N; KHAPACHEV, YU. P; ALFERIEFF, M. A et al.Technical physics. 1993, Vol 38, Num 12, pp 1061-1066, issn 1063-7842Article

MOMBE and characterization of InAs and (Al, Ga)SbUNGERMANNS, C; HARDTDEGEN, H; MATT, M et al.Journal of crystal growth. 1998, Vol 188, Num 1-4, pp 32-38, issn 0022-0248Conference Paper

Gallium antimonide infrared solar cells with improved efficiency and manufacturabilityGRUENBAUM, P. E; DINH, V. T; SUNDARAM, V. S et al.Solar energy materials and solar cells. 1994, Vol 32, Num 1, pp 61-69, issn 0927-0248Article

Optical characterization of GaSb-based ternary and quaternary alloys grown by liquid-phase epitaxy at low temperaturesICHIMURA, M; KATO, K.-I; UEKITA, H et al.Japanese journal of applied physics. 1993, Vol 32, Num 9A, pp 3707-3712, issn 0021-4922, 1Article

Design of high-power room-temperature continuous-wave gasb-based type-I quantum-well lasers with wavelength > 2.5μmSHTERENGAS, L; BELENKY, G. L; KIM, J. G et al.Proceedings - Electrochemical Society. 2004, pp 205-209, issn 0161-6374, isbn 1-56677-407-1, 5 p.Conference Paper

Spectroscopic ellipsometry characterization of interface reactivity in GaAs-based superlatticesLOSURDO, M; GIUVA, D; GIANGREGORIO, M. M et al.Thin solid films. 2004, Vol 455-56, pp 457-461, issn 0040-6090, 5 p.Conference Paper

MOVPE of GaSb, (AlGa)Sb and (AlGa)(AsSb) in a multiwafer planetary reactorAGERT, Carsten; LANYI, Peter; BETT, Andreas W et al.Journal of crystal growth. 2001, Vol 225, Num 2-4, pp 426-430, issn 0022-0248Conference Paper

Calibration of the arsenic mole fraction in MBE grown GaAs_ySb_1-y and Al_xGa_1-xAs_ySb_1-y (y < 0.2)SELVIG, E; FIMLAND, B. O; SKAULI, T et al.Journal of crystal growth. 2001, Vol 227-28, pp 562-565, issn 0022-0248Conference Paper

Selective area epitaxy of GaSb and AlGaSb by metalorganic molecular beam epitaxyLIU, X. F; ASAHI, H; OKUNO, Y et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 250-255, issn 0022-0248Conference Paper

Contribution à la passivation des photodétecteurs Ga(Al)Sb. Etude de la sulfuration = Contribution to the Ga(Al)Sb photodetector passivation. Sulfidation studyCoudray, Paul; Luquet, Henri.1993, 130 p.Thesis

Current-voltage characteristic and Schottky barrier height of the GaAlAsSb(p)/GaSb(n⁺) heterostructureAIT KACI, H; BOUKREDIMI, D; MEBARKI, M et al.Physica status solidi. A. Applied research. 2001, Vol 183, Num 2, pp 345-351, issn 0031-8965Article

Molecular beam epitaxy of GaSb/A1_xGa_1-xSb quantum well structuresMASSIES, J; LEROUX, M; MARTINEZ, Y et al.Journal of crystal growth. 1996, Vol 160, Num 3-4, pp 211-219, issn 0022-0248Article

Crystallization kinetics of Ga-Sb-Te films for phase change memoryCHENG, Huai-Yu; KAO, Kin-Fu; LEE, Chain-Ming et al.Thin solid films. 2008, Vol 516, Num 16, pp 5513-5517, issn 0040-6090, 5 p.Conference Paper

Polarization-dependent angle-resolved photoemission study of a surface state on GaSb(110)ZHANG, X. D; LECKEY, R. C. G; RILEY, J. D et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 8, pp 5300-5305, issn 0163-1829Article

Characteristics of growing of heterostructures in the system GaSb-AlSb = Caractéristiques de croissance des structures hétérogènes dans le système GaSb-AlSb = Wachstumscharakteristik von Heterostrukturen im System GaSb-AlSbYORDANOVA, I.Crystal research and technology (1979). 1982, Vol 17, Num 12, pp 1477-1481, issn 0232-1300Article

Mechanism of zinc diffusion in gallium antimonideNICOLS, S. P; BRACHT, H; BENAMARA, M et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 854-857, issn 0921-4526Conference Paper